The Next-generation of Sic-based Power Systems

T requirements of modern high-performance power electronic systems, in particular for the military applications as shown in Figure 1, are surpassing the power density, efficiency and reliability limitations set by the inherent properties of widely employed silicon-based devices. To overcome this, new device technologies are being explored. The past decade has seen an intense and steady increase of resources being funneled into the research and development of wide bandgap devices, such as silicon carbide (SiC). SiC power devices hold the promise of vastly exceeding previously constraining restrictions imposed by silicon-based devices. This new technology is just now beginning to find its way into the commercial marketplace. While the present focus in the market is on developing power devices such as high-voltage, high-current MOSFETs the truly revolutionizing potential of SiC has yet to be tapped.